IRF820S, SiHF820S
Vishay Siliconix
800
600
V GS = 0 V, f = 1 MHz
C iss = C gs + C gd , C ds Shorted
C rss = C gd
C oss = C ds + C gd
C iss
400
200
C oss
10 0
150 ° C
25 ° C
0
C rss
V GS = 0 V
10 0
10 1
0.4
0.6
0.8
1.0
1.2
91060_05
V DS, Drain-to-Source Voltage (V)
91060_07
V SD , Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
16
12
I D = 2.1 A
V DS = 400 V
V DS = 250 V
V DS = 100 V
10 2
5
2
10
5
2
Operation in this area limited
by R DS(on)
10 μs
100 μs
1
1 ms
8
5
2
10 ms
10 2
10
4
0
0
4
8
12
16
For test circuit
see figure 13
20 24
0.1
5
2
10 -2
0.1
2
5
1
2
5
T C = 25 ° C
T J = 150 ° C
Single Pulse
2 5
2
5
10 3
2
5
10 4
91060_06
Q G , Total Gate Charge (nC)
91060_08
V DS , Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Fig. 8 - Maximum Safe Operating Area
Document Number: 91060
S11-1049-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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